This site uses third-party website tracking technologies to provide and continually improve our services, and to display advertisements according to users' interests. I agree and may revoke or change my consent at any time with effect for the future.
SSH10N70
FEATURES
· Low er Rds < on )
N-CHANNEL POWER MOSFETS
· · · · · ·
Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance E