DSA00101580.pdf by International Rectifier

Partial File Text PD -96294 IRFH5110PbF HEXFET® Power MOSFET VDS 100 V 12.4 m nC RG (typical) 48 1.5 ID 63 A RDS(on) max (@VGS = 10V) Qg (typical) (@Tc(Bottom) = 25°C)
Datasheet Type Original
RoHS Yes
Pb Free Yes
Lifecycle Obsolete
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IRFH5110TRPBF

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