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    DSAZSAA00030910.pdf by International Rectifier

    • IRFH5020PbF HEXFET® Power MOSFET VDS 200 V RDS(on) max 55 mΩ Qg (typical) 36 nC RG (typical) 1.9 Ω ID 34 A (@VGS = 10V) (@Tc(Bottom) = 25°C) PQ
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