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    DSAZSAA00030917.pdf by International Rectifier

    • IRG7PH50K10DPbF IRG7PH50K10D-EPbF   Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode   VCES = 1200V   C C C IC = 50A, TC =100°C tSC 10µs, TJ(m
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