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    DSAZSAA00030918.pdf by International Rectifier

    • IRG7PK35UD1PbF IRG7PK35UD1-EPbF   Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode   VCES = 1400V C C C   IC = 20A, TC =100°C TJ(max) = 150°C G
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