DSA00461529.pdf by Hitachi Semiconductor

Partial File Text 4AM16 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching Features · Low on-resistance N Channel: RDS(on) 0.17 , VGS = 10 V, I D = 4 A P Channel: RDS(on)
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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