DSA2IH00167745.pdf by Not Available

Partial File Text SAMSUNG SEMICONDUCTOR INC DE I T i m m s 0 0S 0b 4 7 I V -o s "- ^" IRFA1ZO/1Z3 FEATURES LOW RoS{on) N-CHANNEL PO W ER M O S F E T S Improved inductive ruggedness Fast switch
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g4e diode IRFA1Z0