DSA2IH00168841.pdf by Not Available

Partial File Text - 7964.142 SAMSUNG SEMICONDUCTOR INC. DE I TTtiM m E Q0QS3n 3 | ` ..... _98D__0 5319 ' D ___ 7 ~ -3 7 ^ / 2 SSM6N55/6N60 FEATURES Low Ros(on) at high voltage Improved inductive rugge
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