DSA00299980.pdf by Central Semiconductor

Partial File Text PROCESS CPD83V Switching Diode High Speed Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x11 MILS Die Thickness 7.1MILS Anode Bonding Pad Area
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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1n4148 1N4148 chip 1n4148 die 1n4148 die chip 1N4154 1N4448 1N4448 CMPD7000 1N4454 1N914 1N914B CMPD2836 CMPD2838 CMPD4448 CMPD914 CPD83V DIODE CHIP 1N4148 DIODE R3

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