DSAIH00084163.pdf by Cree

Partial File Text CGHV14250 250 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Creeâs CGHV14250 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficien
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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