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DSAH00714106.pdf
by International Rectifier
Partial File Text
PD - 9.1235 IRLI620G HEXFET® Power MOSFET Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. 4.8mm Logic-Level Gate Drive RDS(ON) Specified at VGS = 4V & 5V Fast Switc
Datasheet Type
Original
RoHS
No
Pb Free
No
Lifecycle
Transferred
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