DSA00244464.pdf by Fairchild Semiconductor

Partial File Text FCD600N60Z N-Channel MOSFET October 2012 FCD600N60Z 600V N-Channel MOSFET Features · 650V @TJ = 150°C · Max. RDS(on) = 600m · Ultra Low Gate Charge (Typ. Qg = 20nC) · Low Effective Output Cap
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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