DSA00466563.pdf by Fairchild Semiconductor

Partial File Text ® FQD2N60C/FQU2N60C 600V N-Channel MOSFET Features Description · 1.9A, 600V, RDS(on) = 4.7 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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FDU2N60C FQD2N60C FQU2N60C

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