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Partial File Text ï»¿_ - M ' ...7964142 SAMSUNG SEMICONDUCTOR I NC Tfl DE J TTbmMS 0DDS1S4 0 IRF350/351/352/353 98D 05124 N'CHANNEL pT'Jf-fi POWER MOSFETS FEATURES LOW RDS(on) Improved inductive ruggedness Fas
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IRF251 IRF252 IRF253 IRF350 IRF351 IRF352 IRF353