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    DSA00247332.pdf by Fujitsu

    • FLM1415-6F Internally Matched Power GaAs FET FEATURES · · · · · · · High Output Power: P1dB = 37.0dBm (Typ.) High Gain: G1dB = 5.5dB (Typ.) High PAE: add = 20% (Typ.) Low IM3 = -45dBc@Po = 26.0dBm (
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