DSAH00325866.pdf by Mitsubishi

Partial File Text MITSUBISHI SEMICONDUTOR <GaAs FET> ./2006 MGF4961B SUPER LOW NOISE InGaAs HEMT DESCRIPTION The MGF4961B super-low noise HEMT (High Electron Mobility Transistor) is designed for use in K ban
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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