DSA2IH00173731.pdf
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- SGS-THOMSON ¡y SGSP301 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM · DIE SIZE: 52x53 mils · METALLIZATION: Al Top Back Au /C r /NI /Au · BACKSIDE THICKNESS: 6100 Â 16 ±
- Scan
- No
- Unknown
- Obsolete