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DSA2IH00173733.pdf
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* IM « F=7 SGS-THOMSON SGSP358 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 77x77 mils METALLIZATION: Top Al Back A u/C r/N i/A u BACKSIDE THICKNESS: 6100 A D
Datasheet Type
Scan
RoHS
No
Pb Free
Unknown
Lifecycle
Obsolete
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User Tagged Keywords
GS 669
MC008