DSA00250234.pdf by Freescale Semiconductor

Partial File Text Freescale Semiconductor Technical Data MRF6S18060 Rev. 0, 3/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station a
Datasheet Type Original
RoHS Yes
Pb Free No
Lifecycle Transferred
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MRF6S18060MR1

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