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    DSA00128608.pdf by Fujitsu

    • FLL177ME L-Band Medium & High Power GaAs FET FEATURES · · · · · High Output Power: P1dB=32.5dBm (Typ.) High Gain: G1dB=12.5dB (Typ.) High PAE: add=46% (Typ.) Proven Reliability Hermetica
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