DSA00310648.pdf by Fairchild Semiconductor

Partial File Text FDMC4435BZ P-Channel Power Trench® MOSFET -30 V, -18 A, 20 m: Features General Description Max rDS(on) = 20 m: at VGS = -10 V, ID = -8.5 A This P-Channel MOSFET is produced using Fairchil
Datasheet Type Original
RoHS Yes
Pb Free Yes
Lifecycle Transferred
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fairchild top marking FDMC4435BZ MO-229 mo-229 pad layout trench mosfet