DSA00128636.pdf
by Fujitsu
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FLK017XP
GaAs FET & HEMT Chips
FEATURES
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High Output Power: P1dB = 20.5dBm(Typ.)
High Gain: G1dB = 8.0dB(Typ.)
High PAE: add = 26%(Typ.)
Proven Reliability
Drain
DESCRIPTION
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Original
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Unknown
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Unknown
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Unknown
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