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    DSA00128643.pdf by Fujitsu

    • FLK027XP, FLK027XV GaAs FET & HEMT Chips FEATURES · · · · High Output Power: P1dB = 24.0dBm(Typ.) High Gain: G1dB = 7.0dB(Typ.) High PAE: add = 32%(Typ.) Proven Reliability Drain DES
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    108 to 174 mhz FLK027XP FLK027XV
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