DSA00128696.pdf by Fujitsu

Partial File Text FHX35X GaAs FET & HEMT Chips FEATURES · · · · Low Noise Figure: 1.2dB (Typ.)@f=12GHz High Associated Gain: 10.0dB (Typ.)@f=12GHz Lg 0.25µm, Wg = 280µm Gold Gate Metallization for High Rel
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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FHX35 FHX35X fujitsu gaas fet fhx35x GaAs FET HEMT Chips GaAs FETs high power FET transistor s-parameters transistor hemt

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