DSASFU60001607.pdf by ON Semiconductor

Partial File Text NGTB20N135IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
Price & Stock
Powered by Findchips

DSASFU60001607.pdf preview

Download Datasheet

User Tagged Keywords

NGTB20N135IHRWG