DSA00261082.pdf by Fujitsu

Partial File Text FLR016FH K-Band Power GaAs FETs FEATURES · High Output Power: P1dB = 20.0dBm(Typ.) · High Gain: G1dB = 8.5dB(Typ.) N · High PAE: hadd = 26%(Typ.) O T · Proven Reliability REC OM DESCRIPTION ME F
Datasheet Type Original
RoHS No
Pb Free Unknown
Lifecycle Obsolete
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