DSA00261222.pdf by Fujitsu

Partial File Text FHX35X GaAs FET & HEMT Chips FEATURES · · · · Low Noise Figure: 1.2dB (Typ.)@f=12GHz High Associated Gain: 10.0dB (Typ.)@f=12GHz Lg ² 0.25µm, Wg = 280µm Gold Gate Metallization for High Reliability
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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