DSA00261237.pdf by Fujitsu

Partial File Text FLK017XP GaAs FET & HEMT Chips FEATURES · · · · High Output Power: P1dB = 20.5dBm(Typ.) High Gain: G1dB = 8.0dB(Typ.) High PAE: hadd = 26%(Typ.) Proven Reliability Source Gate Drain DESCRIPT
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
Price & Stock
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