DSA00261239.pdf by Fujitsu

Partial File Text FLK027XP, FLK027XV GaAs FET & HEMT Chips FEATURES · · · · High Output Power: P1dB = 24.0dBm(Typ.) High Gain: G1dB = 7.0dB(Typ.) High PAE: hadd = 32%(Typ.) Proven Reliability Source Gate Drain
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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