DSA00261319.pdf
by Fujitsu
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FLM7785-6F
C-Band Internally Matched FET
FEATURES
· · · · · · · High Output Power: P1dB = 38.5dBm (Typ.) High Gain: G1dB = 8.5dB (Typ.) High PAE: hadd = 31% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Bro
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Original
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Unknown
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Unknown
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Unknown
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