DSA00271403.pdf by Hitachi Semiconductor

Partial File Text 3SK317 Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier ADE-208-778 (Z) 1st. Edition March 1, 1999 Features · Low noise characteristics; (NF = 1.0 dB typ. at f = 200 MHz) · High power g
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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