DSA00272323.pdf by Hitachi Semiconductor
- 6AM15 Silicon N/P Channel MOS FET High Speed Power Switching ADE-208-719 (Z) 1st. Edition February 1999 Features ยท Low on-resistance N Channel: RDS(on) = 0.045 typ. P Channel: RDS(on) = 0.085 t
- Original
- Unknown
- Unknown
- Transferred
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