DSA00272664.pdf by Hitachi Semiconductor

Partial File Text HE8812SG GaAlAs Infrared Emitting Diode Description The HE8812SG is a GaAlAs double heterojunction structure 870 nm band light emitting diode. It is suitable for use as the light source in a wide
Datasheet Type Original
RoHS No
Pb Free Unknown
Lifecycle Transferred
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