DSA00275264.pdf by Hitachi Semiconductor

Partial File Text 2SJ587 Silicon P Channel MOS FET High Speed Switching ADE-208-801 (Z) 1st.Edition. June 1999 Features · Low on-resistance RDS = 8.5 typ. (VGS = -4 V , ID = -25 mA) RDS = 15 typ. (VGS = -2.5 V ,
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