DSA00275909.pdf by Hitachi Semiconductor

Partial File Text 2SK3212 Silicon N Channel MOS FET High Speed Power Switching ADE-208-762(Z) 1st. Edition Dec. 1, 1998 Features · Low on-resistance R DS =0.1 typ. · High speed switching · 4V gate drive device ca
Datasheet Type Original
RoHS No
Pb Free Unknown
Lifecycle Transferred
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2SK3212-E 2SK3212

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