DSA00275938.pdf by Hitachi
- 4AK18 Silicon N-Channel Power MOS FET Array Application High speed power switching Features · Low on-resistance R DS(on) 0.38 , VGS = 10 V, I D = 1 A R DS(on) 0.53 , VGS = 4 V, I D = 1 A ·
- Original
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