DSA00275946.pdf by Hitachi Semiconductor

Partial File Text 4AK27 Silicon N Channel MOS FET High Speed Power Switching ADE-208-728 (Z) 1st. Edition January 1999 Features · Low on-resistance R DS(on) 0.15, VGS = 10V, ID = 3.0A · 4V gate drive devices. · H
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