DSA00277926.pdf by Hitachi

Partial File Text 2SJ496 Silicon P-Channel MOS FET High Speed Power Switching ADE-208-482 1st. Edition Features · Low on-resistance RDS(on) = 0.12 typ. (at VGS = 10 V, ID = 2.5 A) · 4V gate drive devices. · Larg
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
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