DSA00278074.pdf by Hitachi

Partial File Text 2SK2912(L), 2SK2912(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-495 1st. Edition Features · Low on-resistance RDS = 15 m typ. · High speed switching · 4V gate drive device can
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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