DSA00278108.pdf by Hitachi

Partial File Text 2SK2596 Silicon N-Channel MOS FET UHF Power Amplifier 1st. Edition Features · High power output, High gain, High efficiency PG = 12.2dB, Pout = 30.2dBm, D = 45 %min. (f = 836.5MHz) · Compact pack
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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