DSA00278704.pdf by Hitachi

Partial File Text 4AM12 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching Features · Low on-resistance N-channel: RDS(on) 0.075 , VGS = 10 V, ID = 4 A P-channel: RDS(on)
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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