DSAZIHA1000311214.pdf by Toshiba

Partial File Text GT25G101(SM) TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON NâCHANNEL IGBT GT25G101(SM) Unit: mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE (sat) = 8
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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