DSAQ00274595.pdf by California Eastern Laboratories

Partial File Text HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3517S03 K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL GaAs HJ-FET FEATURES · Super low noise figure, high associated gain NF = 0.7 dB TYP., Ga = 13.5 dB
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HS350 NE3517S03 NE3517S03-A NE3517S03-T1C