DSAZIHA100017130.pdf by American Microsemiconductor

Partial File Text 1MBI200N120 Transistors Independent IGBT Power Module Isolated Case (Y/N)Yes Circuits Per Package1 V(BR)CES (V)1.2k V(BR)GES (V) I(C) Max. (A)200 Absolute Max. Power Diss. (W)1.6k Minimum Oper
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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