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    DSAZIHA100017237.pdf by American Microsemiconductor

    • 2G309 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V(BR)CEO (V) V(BR)CBO (V)15 I(C) Max. (A)100m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)10u @V(
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