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    DSAZIHA100017239.pdf by American Microsemiconductor

    • 2G320 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V(BR)CEO (V)20ã V(BR)CBO (V)30 I(C) Max. (A)200m Absolute Max. Power Diss. (W)225m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)16uÃ
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