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    DSAZIHA100017318.pdf by American Microsemiconductor

    • 2MBI300LB060 Transistors Half Bridge IGBT Power Module Isolated Case (Y/N)Yes Circuits Per Package1 V(BR)CES (V)600 V(BR)GES (V)20 I(C) Max. (A)300 Absolute Max. Power Diss. (W)1.2k‚ Minimum
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