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    DSAZIHA100017429.pdf by American Microsemiconductor

    • 2N1102 Transistors Ge NPN Lo-Pwr BJT Military/High-RelN V(BR)CEO (V)25 V(BR)CBO (V)40 I(C) Max. (A)100m Absolute Max. Power Diss. (W)180m Maximum Operating Temp (øC)75õ I(CBO) Max. (A)50u @
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