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    DSAZIHA100018336.pdf by American Microsemiconductor

    • GSI550 Transistors N-Channel IGBT with Current Sensing V(BR)CES (V)500 V(BR)GES (V)25 I(C) Max. (A)80 Absolute Max. Power Diss. (W)200 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-
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