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    • jun 1998 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES • 30V, 65A, Rds(on>= 8m Q @ Vgs=1 0V. Rds(on)=1 2m Q @Vgs=4.5V. • Super high dense cell design for extremel
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    B7030 CEB7030L CEP7030L p7030l
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